LEADER 00000cam  2200529Mi 4500 
001    ocn614991499 
003    OCoLC 
005    20160518075959.3 
006    m     o  d         
007    cr cn||||||||| 
008    060207s2005    njua    ob    001 0 eng d 
019    77718715|a144224606|a243607614|a648234781|a722569136
       |a728037888|a888794595 
020    9812703195|q(electronic bk.) 
020    9789812703194|q(electronic bk.) 
035    (OCoLC)614991499|z(OCoLC)77718715|z(OCoLC)144224606
       |z(OCoLC)243607614|z(OCoLC)648234781|z(OCoLC)722569136
       |z(OCoLC)728037888|z(OCoLC)888794595 
040    CaPaEBR|beng|epn|erda|cADU|dE7B|dOCLCQ|dN$T|dYDXCP|dSFB
       |dIDEBK|dOCLCQ|dFVL|dOCLCQ|dMERUC|dOCLCQ|dOCLCF|dOCLCO
       |dOCLCQ 
049    GTKE 
050  4 QC611.6.R3|bK69 2005eb 
082 04 621.38152|222 
100 1  Kozlovskiĭ, V. V.|q(Vitaliĭ Vasilʹevich) 
245 10 Radiation defect engineering /|cKozlovski Vitali, 
       Abrosimova Vera. 
264  1 New Jersey ;|aLondon :|bWorld Scientific,|c[2005] 
264  4 |c©2005 
300    1 online resource (viii, 253 pages) :|billustrations. 
336    text|btxt|2rdacontent 
337    computer|bc|2rdamedia 
338    online resource|bcr|2rdacarrier 
490 1  Selected topics in electronics and systems ;|vv. 37 
500    Reprinted from: International journal of high speed 
       electronics and systems, volume 15, numbers 1, 2005. 
504    Includes bibliographical references and index. 
505 0  Preface; Contents; 1 Ion-S timulated Processes; 2 
       Transmutation Doping of Semiconductors by Charged 
       Particles; 3 Doping of Semiconductors Using Radiation 
       Defects; 4 Formation of Buried Porous and Damaged Layers; 
       References; Index. 
520    The increasing complexity of problems in semiconductor 
       electronics and optoelectronics has exposed the 
       insufficient potential of the technological doping 
       processes currently used. One of the most promising 
       techniques, which this book explores, is radiation doping:
       the intentional, directional modification of the 
       properties of semiconductors under the action of various 
       types of radiation. The authors consider the basic 
       principles of proton interactions with single crystal 
       semiconductors on the basis of both theory as well as 
       practical results. All types of proton modifications of 
       the materials. 
588 0  Print version record. 
650  0 Semiconductor doping. 
650  0 Semiconductors|xEffect of radiation on. 
650  7 TECHNOLOGY & ENGINEERING|xElectronics|xSolid State.
       |2bisacsh 
650  7 TECHNOLOGY & ENGINEERING|xElectronics|xSemiconductors.
       |2bisacsh 
650  7 Semiconductor doping.|2fast|0(OCoLC)fst01112124 
650  7 Semiconductors|xEffect of radiation on.|2fast
       |0(OCoLC)fst01112217 
700 1  Abrosimova, Vera. 
740 02 International journal of high speed electronics and 
       systems. 
776 08 |iPrint version:|aKozlovskiĭ, V.V. (Vitaliĭ Vasilʹevich).
       |tRadiation defect engineering.|dNew Jersey ; London : 
       World Scientific, ©2005|z9812565213|w(DLC)  2006283955
       |w(OCoLC)64096752 
830  0 Selected topics in electronics and systems ;|vv. 37. 
914    ocn614991499 
994    93|bGTK